Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Abstract Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent...

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Autors principals:	Qiuhong Tan, Qianjin Wang, Yingkai Liu, Hailong Yan, Wude Cai, Zhikun Yang
Format:	Artigo
Idioma:	Inglês
Publicat:	SpringerOpen 2018-04-01
Col·lecció:	Nanoscale Research Letters
Matèries:	Ferroelectric field-effect transistors (FeFETs) Single-walled carbon nanotube (SWCNT) Nonvolatile memory Ferroelectric film
Accés en línia:	http://link.springer.com/article/10.1186/s11671-018-2534-1
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