The influence of heavy doping of TiCoSb intermetallic semiconductor with Cr atoms on structural, kinetic and energetic properties
The structural, electrokinetic, and energetic properties of the TiСо1-xCrxSb semiconductor obtained by doping TiCoSb with Cr atoms introduced into the structure by substituting Co atoms in the crystallographic position 4c were studied. It was shown that in TiСо1-xCrxSb the structural defects of dono...
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| Hlavní autoři: | , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Vasyl Stefanyk Carpathian National University
2024-06-01
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| Edice: | Фізика і хімія твердого тіла |
| Témata: | |
| On-line přístup: | https://journals.pnu.edu.ua/index.php/pcss/article/view/7376 |
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