Temperature Dependences of the Electron Energy in AlxGa1 – xAs / GaAs / AlxGa1 – xAs Nanofilms of Different Thickness and Composition of the Barrier Material
Temperature dependences of the energy of electron ground state in AlxGa1 – xAs / GaAs / AlxGa1 – xAs nanofilms of different thickness and concentrations (x) of the barrier material were calculated. Calculations were performed by using the Green functions method, approximation of the effective masses...
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| Autores principales: | , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sumy State University
2014-11-01
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| Colección: | Журнал нано- та електронної фізики |
| Materias: | |
| Acceso en línea: | http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04032.pdf |
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