Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Abstract In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse se...

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Bibliografische Detailangaben

Hauptverfasser:	Chaofei Zha, Wei Luo, Xia Zhang, Xin Yan, Xiaomin Ren
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	SpringerOpen 2022-10-01
Schriftenreihe:	Nanoscale Research Letters
Schlagworte:	InAs nanowires Artificial synapses Gate-all-around field-effect transistor Synapse function
Online-Zugang:	https://doi.org/10.1186/s11671-022-03740-1
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