Femtosecond Laser Deposition of Germanium Selenide onto Silicon Platform at Different Substrate Temperatures
Germanium selenide (GeSe) thin films were fabricated by employing femtosecond pulsed-laser deposition (fs-PLD) on silicon (100) substrates at various substrate temperatures, ranging from 25 °C to 600 °C. The thin films’ surface morphology qualities and optical properties were studied by utilising tr...
Furkejuvvon:
| Váldodahkkit: | , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
MDPI AG
2022-06-01
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| Ráidu: | Nanomaterials |
| Fáttát: | |
| Liŋkkat: | https://www.mdpi.com/2079-4991/12/12/2003 |
| Fáddágilkorat: |
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