Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide-catalyzed epitaxy (MOCATAXY). We grow phase-pure β-...
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| Autores principales: | , , , , , , , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
AIP Publishing LLC
2023-11-01
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| Colección: | APL Materials |
| Acceso en línea: | http://dx.doi.org/10.1063/5.0174373 |
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