Properties of arsenic–implanted Hg1-xCdxTe MBE films
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation w...
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| Hauptverfasser: | , , , , , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
EDP Sciences
2017-01-01
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| Schriftenreihe: | EPJ Web of Conferences |
| Online-Zugang: | http://dx.doi.org/10.1051/epjconf/201713301001 |
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