Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing
Abstract Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. Howe...
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| Principais autores: | , , , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2024-04-01
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| coleção: | Communications Materials |
| Acesso em linha: | https://doi.org/10.1038/s43246-024-00486-4 |
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