Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices
Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Physical Society
2025-09-01
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| coleção: | PRX Quantum |
| Acesso em linha: | http://doi.org/10.1103/x2cv-2gcw |
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