High-field spatial imaging of charge transport in silicon at low temperature
We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111]...
Tallennettuna:
| Päätekijät: | , , , , , , , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
AIP Publishing LLC
2020-02-01
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| Sarja: | AIP Advances |
| Linkit: | http://dx.doi.org/10.1063/1.5131171 |
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