Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices

High-density memories and high-speed CPUs are usually realized by reduction of the size of semiconductor cells in Large Scale Integrations (LSIs). Representative length scale of Ultra Large Scale Integration (ULSI) cells is going to be in nano-meter order. Dislocation accumulation during the product...

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Hlavní autoři:	Michihiro SATO, Tetsuya OHASHI, Yoshiki KAWANO
Médium:	Artigo
Jazyk:	Japonês
Vydáno:	The Japan Society of Mechanical Engineers 2020-04-01
Edice:	Nihon Kikai Gakkai ronbunshu
Témata:	ulsi shallow trench isolation dislocation crystal plasticity analysis
On-line přístup:	https://www.jstage.jst.go.jp/article/transjsme/86/884/86_19-00457/_pdf/-char/en
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