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Charge-carrier dynamics for silicon oxide tunneling junctions mediated by local pinholes

Summary: Tunnel oxide passivating contact (TOPCon) technology has attracted much attention in the crystalline silicon (c-Si) photovoltaic (PV) community due to overwhelming advantages for device efficiency and cost. However, fundamental device physics of the core structure of TOPCon (i.e., the polyc...

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Principais autores: Zhenhai Yang, Zunke Liu, Mei Cui, Jiang Sheng, Li Chen, Linna Lu, Wei Guo, Xi Yang, Yunxing Zhao, Weichuang Yang, J.C. Greer, Yuheng Zeng, Baojie Yan, Jichun Ye
Format: Artigo
Sprog:Inglês
Udgivet: Elsevier 2021-12-01
Serier:Cell Reports Physical Science
Fag:
pinhole
carrier transport mechanism
TOPCon
thermal expansion
passivation properties
Online adgang:http://www.sciencedirect.com/science/article/pii/S2666386421003891
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