Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

Abstract An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using p...

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Xehetasun bibliografikoak

Egile Nagusiak:	Junjun Xue, Jiaming Tong, Zhujun Gao, Zhouyu Chen, Haoyu Fang, Saisai Wang, Ting Zhi, Jin Wang
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Higher Education Press 2024-06-01
Saila:	Frontiers of Optoelectronics
Gaiak:	Wide bandgap semiconductors Graphene Dual-wavelength Photodetector
Sarrera elektronikoa:	https://doi.org/10.1007/s12200-024-00121-7
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