P-type Inversion at the Surface of β-Ga₂O₃ Epitaxial Layer Modified with Au Nanoparticles

The electric properties and chemical and thermal stability of gallium oxide β-Ga₂O₃ make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga₂O₃ still remains a challenge. A...

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Detalhes bibliográficos

Principais autores:	Maciej Krawczyk, Ryszard Korbutowicz, Rafał Szukiewicz, Patrycja Suchorska-Woźniak, Maciej Kuchowicz, Helena Teterycz
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2022-01-01
coleção:	Sensors
Assuntos:	semiconducting metal oxide gas sensors thin film
Acesso em linha:	https://www.mdpi.com/1424-8220/22/3/932
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