Dephasing by optical phonons in GaN defect single-photon emitters

Abstract Single-photon defect emitters (SPEs), especially those with magnetically and optically addressable spin states, in technologically mature wide bandgap semiconductors are attractive for realizing integrated platforms for quantum applications. Broadening of the zero phonon line (ZPL) caused b...

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Autors principals:	Yifei Geng, Jialun Luo, Len van Deurzen, Huili (Grace) Xing, Debdeep Jena, Gregory David Fuchs, Farhan Rana
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2023-05-01
Col·lecció:	Scientific Reports
Accés en línia:	https://doi.org/10.1038/s41598-023-35003-z
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