Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications

This paper presents the area-selective wet etching (ASWE) method as a novel approach to have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film, to improve the performance of a metal ferroelectric metal (MFM)-like structure. According to the electromagnetic simula...

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Detalhes bibliográficos

Principais autores:	Livia Alexandra Dinu, Cosmin Romanitan, Martino Aldrigo, Catalin Parvulescu, Florin Nastase, Silviu Vulpe, Raluca Gavrila, Pericle Varasteanu, Andreea Bianca Serban, Rihem Noumi, Olga M. Ishchenko
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2023-09-01
coleção:	Materials & Design
Assuntos:	Area-selective wet etching Ferroelectricity Zirconium-doped hafnium oxide X-ray reflectivity Phase shifter
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S0264127523006093
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