Design and Modeling of a Dual-Nanogap Triple-Heterojunction Split-Gate T-Shaped Channel Vertical DMDG-TFET With Source Pockets for Biosensing

This work presents a detailed sensitivity analysis of label-free FET-biosensors by comparing traditional tunnel-FETs and split-gate (SG) T-shaped channel structures with the newly proposed dual-pocket Vertical Dielectrically Modulated Double Gate (V-DMDG) TFET-biosensor. For the first time, a T-shap...

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Detalhes bibliográficos

Principais autores:	Girija Sravani Kondavitee, Rapolu Anil Kumar, T. Srinivasa Ravi Kiran, Asisa Kumar Panigrahy, J. Ajayan, Srinivasa Rao Karumuri
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2026-01-01
Colecção:	IEEE Access
Assuntos:	APTES filling factor nanogap DMDG TFET T-shape channel split gate
Acesso em linha:	https://ieeexplore.ieee.org/document/11418904/
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