High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)₂PbI₄/GaN Heterojunction

Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions...

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Váldodahkkit:	Ang Bian, Songchao Shen, Chen Yang, Jun Dai
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2024-11-01
Ráidu:	Nanomaterials
Fáttát:	perovskite wide-bandgap semiconductor ultraviolet detector heterojunction
Liŋkkat:	https://www.mdpi.com/2079-4991/14/22/1819
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