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Metal Penetration and Grain Boundary in MoS2 Memristors

Abstract 2D semiconductors have demonstrated outstanding switching performance in resistive random‐access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van‐der‐Waals stacked...

Täydet tiedot

Tallennettuna:
Päätekijät: Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Wiley-VCH 2025-03-01
Sarja:Advanced Electronic Materials
Aiheet:
2D materials
conductive filaments
metal penetration
resistive random access memory
resistive switching
Linkit:https://doi.org/10.1002/aelm.202400264
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