The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photolumin...
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| Asıl Yazarlar: | , , , , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2018-01-01
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| Seri Bilgileri: | IEEE Photonics Journal |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/8327824/ |
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