Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm−3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
AIP Publishing LLC
2016-11-01
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| Schriftenreihe: | APL Materials |
| Online-Zugang: | http://dx.doi.org/10.1063/1.4966209 |
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