Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing

Artificial synapses are key elements in building bioinspired, neuromorphic computing systems. Ferroelectric field‐effect transistors (FeFETs) with excellent controllability and complementary metal oxide semiconductor (CMOS) compatibility are favorable to achieving synaptic functions with low power c...

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Detalhes bibliográficos

Principais autores:	Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2023-11-01
coleção:	Advanced Intelligent Systems
Assuntos:	charge trapping compact artificial synapse ferroelectric fin field-effect transistor (FinFET) long-term plasticity polarization switching reservoir computing
Acesso em linha:	https://doi.org/10.1002/aisy.202300275
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