Well‐Designed Organic Semiconductors With Tunable Resistive Switching Behaviors for Multilevel Storage and Neuromorphic Computing

ABSTRACT Designing new materials with high‐performance resistive switching (RS) behaviors and/or developing alternative means to modulate the RS behaviors are of great significance for information storage and neuromorphic computing. Herein, we present a novel strategy to design and synthesize furan‐...

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Autors principals:	Dehui Wang, Jinxiang Yin, Yuexin Li, Hongmin Li, Min Wang, Feng Guo, Wenjing Jie, Feijie Song, Jianhua Hao
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley 2025-09-01
Col·lecció:	Aggregate
Matèries:	multilevel storage neuromorphic computing organic semiconductors resistive switching thin films
Accés en línia:	https://doi.org/10.1002/agt2.70099
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