Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes
The influence of variations in indium concentration and temperature on threshold current density (Jth) in InxGa1-xAs/GaAs (x = 0, 0.8 and 0.16) quantum dot (QD) laser diodes – synthesized via molecular beam epitaxy (MBE) with three distinct indium concentrations on GaAs (001) substrates – was meticu...
-д хадгалсан:
| Үндсэн зохиолчид: | , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Elsevier
2025-01-01
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| Цуврал: | Heliyon |
| Нөхцлүүд: | |
| Онлайн хандалт: | http://www.sciencedirect.com/science/article/pii/S2405844025000179 |
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