Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes
Due to their high density, scalability, and low-power properties, 1-transistor-1-resistor (1T1R) RRAM-based crossbars have been exploited in the past. However, the series resistance of the transistor is a major problem in 1T1R crossbar arrays. This limits the maximum current available for inducing r...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Frontiers Media S.A.
2025-07-01
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| シリーズ: | Frontiers in Nanotechnology |
| 主題: | |
| オンライン･アクセス: | https://www.frontiersin.org/articles/10.3389/fnano.2025.1587700/full |
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