Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy
Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (E<sub>g</sub>~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag decades behind conventional III-nitride wide bandgap...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2023-08-01
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| Col·lecció: | Crystals |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2073-4352/13/9/1319 |
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