Circuit simulation and synthesis of active microwave filters based on Schottky field-effect transistors

Existing mathematical models of Schottky field-effect transistors are analyzed. Studies were conducted on the dependence of the invariant stability coefficient for three transistor connection schemes, as well as on the output resistance of the common-drain circuit with inductive and active resistanc...

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Bibliografische Detailangaben

Hauptverfasser:	N. А. Filinyuk, А. М. Kuzemko
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Politekhperiodika 2005-06-01
Schriftenreihe:	Технологія та конструювання в електронній апаратурі
Schlagworte:	filter microwave field-effect transistor equivalent circuit simulation negatronics parameters
Online-Zugang:	https://tkea.com.ua/index.php/journal/article/view/1057
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