Unveiling electron scattering mechanism at Al-doped grain boundaries in Cu interconnects
Doping by capping layers followed by thermal diffusion is an effective way to improve electromigration reliability in Cu interconnects and extend the lifetime of electronic devices. However, the dopant atoms will cause extra electron scattering, exacerbating the interconnect resistivity issues. Here...
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| 主要な著者: | , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Elsevier
2025-03-01
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| シリーズ: | Materials & Design |
| 主題: | |
| オンライン･アクセス: | http://www.sciencedirect.com/science/article/pii/S0264127525000978 |
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