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In‐Grain Ferroelectric Switching in Sub‐5 nm Thin Al0.74Sc0.26N Films at 1 V

Abstract Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. To contribute to a solution, one reports on the ferroelectric switching characteristics of sub‐5 nm thin Al0.74Sc0.26N films grown on P...

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Furkejuvvon:
Váldodahkkit: Georg Schönweger, Niklas Wolff, Md Redwanul Islam, Maike Gremmel, Adrian Petraru, Lorenz Kienle, Hermann Kohlstedt, Simon Fichtner
Materiálatiipa: Artigo
Giella:Inglês
Almmustuhtton: Wiley 2023-09-01
Ráidu:Advanced Science
Fáttát:
domains
ferroelectrics
neuromorphic computing
scandium
thin films
Liŋkkat:https://doi.org/10.1002/advs.202302296
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