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Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability

Silicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particul...

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Principais autores: Ghulam Akbar, Alessio Di Fatta, Giuseppe Rizzo, Guido Ala, Pietro Romano, Antonino Imburgia
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2025-03-01
Serier:Physchem
Fag:
WBG devices
SiC MOSFET
overview
failure modes
Online adgang:https://www.mdpi.com/2673-7167/5/1/10
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