Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation
The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e....
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
AIP Publishing LLC
2018-01-01
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| Edice: | AIP Advances |
| On-line přístup: | http://dx.doi.org/10.1063/1.5012680 |
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