Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis
We utilized twin network analysis of polycrystalline materials through graph theory to visualize microstructures and examine the behavior of dislocation cluster generation in multicrystalline silicon grown by directional solidification. This approach allows for a rapid and statistical understanding...
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| Автори: | , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Taylor & Francis Group
2025-12-01
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| Серія: | Science and Technology of Advanced Materials |
| Предмети: | |
| Онлайн доступ: | https://www.tandfonline.com/doi/10.1080/14686996.2025.2512703 |
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