Direct observation of delithiation as the origin of analog memristance in LixNbO2

The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers re...

Descripció completa

Dades bibliogràfiques

Autors principals:	Sebastian A. Howard, Christopher N. Singh, Galo J. Paez, Matthew J. Wahila, Linda W. Wangoh, Shawn Sallis, Keith Tirpak, Yufeng Liang, David Prendergast, Mateusz Zuba, Jatinkumar Rana, Alex Weidenbach, Timothy M. McCrone, Wanli Yang, Tien-Lin Lee, Fanny Rodolakis, William Doolittle, Wei-Cheng Lee, Louis F. J. Piper
Format:	Artigo
Idioma:	Inglês
Publicat:	AIP Publishing LLC 2019-07-01
Col·lecció:	APL Materials
Accés en línia:	http://dx.doi.org/10.1063/1.5108525
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!