Local Tuning of the Epsilon‐Near‐Zero Condition in Hybrid Silicon Waveguides Using Reactive Laser Annealing

The ability for locally tuning devices in photonic integrated circuits could be an essential function for a wide range of applications requiring reconfigurable photonics. This work demonstrates the application of postgrowth reactive laser annealing to selectively tune the optical properties of tin‐d...

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Auteurs principaux:	Juan Navarro‐Arenas, Thomas M. Howe, Jorge Parra, Demosthenes C. Koutsogeorgis, James A. Hillier, Nikolaos Kalfagiannis, Pablo Sanchis
Format:	Artigo
Langue:	Inglês
Publié:	Wiley-VCH 2025-06-01
Collection:	Advanced Photonics Research
Sujets:	epsilon‐near‐zero hybrid silicon waveguide indium tin oxide laser annealing silicon photonics transparent conducting oxides
Accès en ligne:	https://doi.org/10.1002/adpr.202400140
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