Flexible Memory Application of Nanoscale Ti–Ge–Te Thin Film as Information Storage Medium With Excellent Thermal Stability, Low Resistance Drift and Superior Bending Characteristic

Abstract The flexible Ti–Ge–Te phase change material was proposed and fabricated by magnetron cosputtering method. The impact of titanium dopant and mechanical bending on the thermal stability, electrical resistance, surface morphology, microstructure, and crystallization mechanism of GeTe thin film...

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Hlavní autoři:	Han Gu, Weihua Wu, Xiaochen Zhou, Pei Zhang, Bowen Fu, Jiwei Zhai, Sannian Song, Zhitang Song
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2025-10-01
Edice:	Advanced Science
Témata:	crystallization property flexible material mechanical performance phase change mechanism Ti–Ge–Te thin film
On-line přístup:	https://doi.org/10.1002/advs.202507859
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