Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

Abstract Threshold‐switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures and difficulties in the trap analysis...

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Detalhes bibliográficos

Principais autores:	Minwoo Choi, Ha‐Jun Sung, Bonwon Koo, Jong‐Bong Park, Wooyoung Yang, Youngjae Kang, Yongyoung Park, Yongnam Ham, Dong‐Jin Yun, Dongho Ahn, Kiyeon Yang, Chang Seung Lee
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2024-08-01
coleção:	Advanced Science
Assuntos:	amorphous chalcogenide defect analysis local structure threshold switch trap dynamics
Acesso em linha:	https://doi.org/10.1002/advs.202404035
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