Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT pe...

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מידע ביבליוגרפי

Principais autores:	Wengao Pan, Guoshang Zhang, Xinhua Liu, Kexing Song, Laiyuan Ning, Shuaifang Li, Lijia Chen, Xuefeng Zhang, Tengyan Huang, Huan Yang, Xiaoliang Zhou, Shengdong Zhang, Lei Lu
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	MDPI AG 2023-11-01
סדרה:	Micromachines
נושאים:	zinc-tin oxide oxygen vacancy homojunction thin-film transistor
גישה מקוונת:	https://www.mdpi.com/2072-666X/14/12/2144
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!