Effect of Pb dopant On A.C mechanism of ZnS thin films
Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric consta...
שמור ב:
| מחבר ראשי: | |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
University of Baghdad
2019-02-01
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| סדרה: | Iraqi Journal of Physics |
| נושאים: | |
| גישה מקוונת: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/307 |
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