In Situ Monitoring of Growth of Vertically Stacked h-BN/Graphene Heterostructures on Ni Substrates and Their Interface Interaction

Vertically stacked hexagonal boron nitride (h-BN)/graphene heterostructures present potential applications in electronic, photonic, and mechanical devices, and their interface interaction is one of the critical factors that affect the performances. In this work, the vertical h-BN/graphene heterostru...

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Detalles Bibliográficos

Principais autores:	Wei Wei, Guanhua Zhang, Jiaqi Pan, Yi Cui, Qiang Fu
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2020-07-01
Series:	Surfaces
Assuntos:	hexagonal boron nitride (h-BN) graphene vertical heterostructures interface interaction
Acceso en liña:	https://www.mdpi.com/2571-9637/3/3/24
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