Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications
For the CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polya...
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| Principais autores: | , , |
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| 格式: | Artigo |
| 语言: | Inglês |
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MDPI AG
2023-07-01
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| 丛编: | Nanomaterials |
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| 在线阅读: | https://www.mdpi.com/2079-4991/13/15/2174 |
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