Room-temperature negative differential resistance in gate-tunable Weyl semimetal transistors

Negative differential resistance (NDR) has garnered substantial interest in propelling the progression of next-generation electronic devices. Weyl semimetals (WSMs) are a potential candidate for NDR devices; however, the NDR effect in WSMs has not been investigated. Here, we propose the gate-tunable...

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Principais autores:	Shih-Hung Cheng, Ting-I Kuo, Er-Feng Hsieh, Wen-Jeng Hsueh
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Elsevier 2024-12-01
סדרה:	Results in Physics
נושאים:	Negative differential resistance Weyl semimetals Tunable gate Transistors Peak-to-valley current ratio Current density
גישה מקוונת:	http://www.sciencedirect.com/science/article/pii/S2211379724007241
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