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Systematic Analysis of a Modified Uni-Traveling-Carrier Photodiode under High-Power Operating Conditions

We theoretically analyzed the detailed carrier transport process based on the drift-diffusion model in the InGaAs/InP modified Uni-Traveling-Carrier Photodiode (MUTC-PD) under high optical input power conditions. A high-speed MUTC-PD design was simulated in depth using the commercial simulation soft...

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Principais autores: Wanshu Xiong, Zhangwan Peng, Ruoyun Yao, Qianwen Guo, Chaodan Chi, Chen Ji
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-04-01
Serier:Photonics
Fag:
Uni-Traveling-Carrier Photodiode (UTC-PD)
hybrid absorber
drift-diffusion model
structural optimization
high power
Online adgang:https://www.mdpi.com/2304-6732/10/4/471
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