Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover,...

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Autors principals:	Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith, Joachim Knoch
Format:	Artigo
Idioma:	Inglês
Publicat:	Beilstein-Institut 2018-08-01
Col·lecció:	Beilstein Journal of Nanotechnology
Matèries:	energy offset impurity doping alternative ultrasmall nanoscale silicon crystals wires and devices
Accés en línia:	https://doi.org/10.3762/bjnano.9.210
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