Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

In this study, Bismuth (Bi) doped ZnSe thin films were deposited on conducting glass substrates by electrochemical deposition technique and the influence of precursor temperature (room, 50, 55, 60 oC) on their optical and structural properties were systematically studied using the combined effect o...

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Principais autores:	Imosobomeh L. Ikhioya, Eli Danladi, Okoli D. Nnanyere, Abdulazeez O. Salawu
Formato:	Artigo
Idioma:	Inglês
Publicado:	Nigerian Society of Physical Sciences 2022-02-01
Series:	Journal of Nigerian Society of Physical Sciences
Assuntos:	ZnSe, Doping, Precursor temperature, Photovoltanic, Electrochemical deposition
Acceso en liña:	https://journal.nsps.org.ng/index.php/jnsps/article/view/502
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