Effect of Temperature on the Current-Voltage Characteristics of n GaAs p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y Heterostructures

This paper investigates the electrophysical properties of n-GaAs-p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructures at different temperatures. The epitaxial n-GaAs-p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y grown on GaAs substrates showed p-type conductivity, and their resistivity (5 Ω·cm), charge carrier conc...

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Hlavní autoři:	Akramjon Y. Boboev, Iqboljon M. Soliev, Nuritdin Y. Yunusaliyev, Murodiljon M. Xotamov
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	V.N. Karazin Kharkiv National University Publishing 2025-09-01
Edice:	East European Journal of Physics
Témata:	heterostructure epitaxy current-voltage characteristic temperature donor doping charge carriers mobility
On-line přístup:	https://periodicals.karazin.ua/eejp/article/view/26062
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