Reactive sputtering deposition of SiO2 thin films
SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6–2×10-4 mbar) and of the ion beam current on the target (1.67–6.85 mA). The argon partial pressure during operation of the ion gun w...
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| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Serbian Chemical Society
2008-01-01
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| Seri Bilgileri: | Journal of the Serbian Chemical Society |
| Konular: | |
| Online Erişim: | http://www.shd.org.yu/JSCS/Vol73/No1/JSCS-3693.pdf |
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