Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration
Effect of semiconductor channel carrier concentration on the modifications in the electrical properties of Ag/BaTiO3/SrTiO3/ZnO Metal-Ferroelectric-Insulator-Semiconductor (MFIS) heterostructure has been investigated. Under 4 V applied voltage, low leakage current density ∼3.2 × 10−6 A/cm2, has been...
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| Huvudupphov: | , , , , , |
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| Materialtyp: | Artigo |
| Språk: | Inglês |
| Utgiven: |
AIP Publishing LLC
2014-05-01
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| Serie: | AIP Advances |
| Länkar: | http://dx.doi.org/10.1063/1.4880496 |
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