Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La₃Ga₅SiO₁₄ Substrate Using Electron Beam Irradiation

Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed...

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Detalles Bibliográficos

Principais autores:	Evgeny V. Emelin, Hak Dong Cho, Vitaly I. Korepanov, Liubov A. Varlamova, Darya O. Klimchuk, Sergey V. Erohin, Konstantin V. Larionov, Deuk Young Kim, Pavel B. Sorokin, Gennady N. Panin
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2023-11-01
Series:	Nanomaterials
Assuntos:	graphene diamane resistive switching memristor electron beam irradiation
Acceso en liña:	https://www.mdpi.com/2079-4991/13/22/2978
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