INFLUENCE OF SILICON WAFER CRYSTALLOGRAPHIC ORIENTATION ON ANODIZATION MECHANISM

The influence of silicon wafer crystallographic orientation on the formation of porous silicon during anodization in an HF solution is studied. Cross-section SEM image comparison of samples with different crystallographic orientations has shown that (111) Si samples exhibit a more branching, tree-li...

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Bibliografske podrobnosti

Principais autores:	N. L. Grevtsov, A. V. Klimenka, A. D. Hurbo, V. P. Bondarenko
Format:	Artigo
Jezik:	Russo
Izdano:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2020-03-01
Serija:	Доклады Белорусского государственного университета информатики и радиоэлектроники
Teme:	silicon nanostructures porous silicon electrochemical etching
Online dostop:	https://doklady.bsuir.by/jour/article/view/2593
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