Lateral Heterostructure Formed by Highly Thermally Conductive Fluorinated Graphene for Efficient Device Thermal Management

Abstract The continued miniaturization of chips demands highly thermally conductive materials and effective thermal management strategies. Particularly, the high‐field transport of the devices built with 2D materials is limited by self‐heating. Here a systematic control of heat flow in single‐side f...

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Xehetasun bibliografikoak

Egile Nagusiak:	Fanfan Wang, Zexin Liu, Jinfeng Li, Jian Huang, Li Fang, Xiaofeng Wang, Ruiwen Dai, Kangyong Li, Rong Zhang, Xiaoran Yang, Yue Yue, Zhiqiang Wang, Yuan Gao, Kai Yang, Lifu Zhang, Guoqing Xin
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Wiley 2024-07-01
Saila:	Advanced Science
Gaiak:	current‐carrying capability fluorinated graphene heat dissipation monolayer lateral heterostructure thermal conductivity thermal management
Sarrera elektronikoa:	https://doi.org/10.1002/advs.202401586
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